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2SA812

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2SA812 PNP BJT transistor with 50V VCEO, 100mA collector current, 200mW power and 180MHz gain bandwidth.

BrandCNCHIPDEPOT
SKUCCDP-000886
Product TypeBJT
PackageSOT-23
Status50K+ pcs Stock / Mass Production
Transistor PolarityPNP
Collector-Emitter Voltage (VCEO)50 V
Collector Current (IC)100 mA
DC Current Gain (hFE)90–600 @ IC = 1 mA, VCE = -6 V
Power Dissipation (PD)200 mW
PackageSOT-23

Product Overview

The 2SA812 is a PNP silicon epitaxial bipolar junction transistor designed for general-purpose small-signal amplification and switching. It features a 50V collector-emitter voltage rating, 100mA maximum collector current, and a typical DC current gain of 200 at IC = 1mA. Its relatively high voltage capability and broad hFE range support analog signal and low-current control circuits.
With a mini-mold surface-mount package, the 2SA812 is suitable for compact PCB designs requiring PNP signal amplification, switching, and complementary transistor stages. It is complementary to the 2SC1623 and is available in multiple gain classifications for more specific circuit requirements.

Specifications

Key electrical, package, and sourcing parameters for quick engineering review.

Part Number2SA812
BrandCNCHIPDEPOT
PackageSOT-23
Product TypeBJT
Transistor PolarityPNP
Collector-Emitter Voltage (VCEO)50 V
Collector Current (IC)100 mA
DC Current Gain (hFE)90–600, 200 Typ @ IC = 1 mA, VCE = -6 V
Power Dissipation (PD)200 mW @ TA = 25°C
Collector-Emitter Saturation Voltage (VCE(sat))0.3 V Max (Magnitude) @ IC = -100 mA, IB = -10 mA
Transition Frequency (fT)180 MHz Typ @ VCE = -6 V
Collector-Base Voltage (VCBO)60 V
Emitter-Base Voltage (VEBO)5 V
Junction Temperature (TJ)150°C Max
Storage Temperature-55°C to +150°C
Mounting TypeSurface Mount
Collector Cutoff Current (ICBO)0.1 µA Max (Magnitude) @ VCB = -60 V

Cross Reference & Replacement Information

The following part numbers are commonly reviewed for replacement or compatibility matching. Always verify datasheet, package, pinout, and operating conditions before bulk purchase.

Target BrandTarget MPNReplace TypeNotes
ON Semiconductor2SA1015Possible ReplacementVerify package type and pin configuration.
Rohm Semiconductor2SA733Cross ReferenceConfirm hFE and power dissipation specs.
Toshiba2SA812Original ManufacturerSame MPN from the original brand.
NXP SemiconductorsBC639Functional EquivalentCheck voltage and current ratings for compatibility.

Datasheet

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Typical Applications

  • General-purpose PNP signal amplification
  • Low-current transistor switching circuits
  • Complementary PNP/NPN amplifier stages
  • Analog signal conditioning circuits
  • Voltage level-shifting stages
  • Compact surface-mount control circuits

Ordering & RFQ Information

  • MOQ: Contact sales
  • Lead Time: 3–7 working days for stock items
  • Packaging: Reel / Tube / Tray depending on package
  • Sample Availability: Available on request
  • Mass Production Status: 50K+ pcs Stock / Mass Production

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FAQ

Can this part replace my current model?

It may be suitable depending on your circuit requirements. Please verify datasheet, package, pinout, and test samples before bulk orders.

Can I request samples?

Yes. Please submit your RFQ with target quantity and application details.

Need this part or a compatible replacement?

Send us your target part number, BOM list, quantity, and technical requirements. CNCHIPDEPOT can help review replacement options and provide RFQ support.

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Quality inspection processes help verify component condition, specifications and production consistency before shipment.