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2SB1198

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2SB1198 PNP BJT transistor with 80V VCEO, 500mA collector current, low VCE(sat) and SOT-23 package.

BrandCNCHIPDEPOT
SKUCCDP-000887
Product TypeBJT
PackageSOT-23
Status50K+ pcs Stock / Mass Production
Transistor PolarityPNP
Collector-Emitter Voltage (VCEO)80 V
Collector Current (IC)500 mA
DC Current Gain (hFE)120–390 @ IC = 100 mA, VCE = -3 V
Power Dissipation (PD)200 mW
PackageSOT-23

Product Overview

The 2SB1198 is a PNP epitaxial silicon bipolar junction transistor designed for low-frequency switching and amplification. It features an 80V collector-emitter voltage rating, 500mA maximum collector current, and low collector-emitter saturation voltage, making it suitable for efficient discrete switching stages and general-purpose driver circuits.
Packaged in a compact SOT-23 surface-mount package, the 2SB1198 supports space-efficient PCB designs requiring higher voltage capability than typical low-voltage PNP transistors. Its DC current gain range and 180MHz transition frequency also make it useful in signal amplification, complementary stages, and low-frequency control applications.

Specifications

Key electrical, package, and sourcing parameters for quick engineering review.

Part Number2SB1198
BrandCNCHIPDEPOT
PackageSOT-23
Product TypeBJT
Transistor PolarityPNP
Collector-Emitter Voltage (VCEO)80 V
Collector Current (IC)500 mA
DC Current Gain (hFE)120–390 @ IC = -100 mA, VCE = -3 V
Power Dissipation (PD)200 mW @ TA = 25°C
Collector-Emitter Saturation Voltage (VCE(sat))0.5 V Max (Magnitude), 0.2 V Typ @ IC = -500 mA, IB = -50 mA
Transition Frequency (fT)180 MHz Typ @ VCE = -10 V, IE = 50 mA
Collector-Base Voltage (VCBO)80 V
Emitter-Base Voltage (VEBO)5 V
Junction Temperature (TJ)150°C Max
Storage Temperature-40°C to +150°C
Mounting TypeSurface Mount
Collector Cutoff Current (ICBO)0.5 µA Max (Magnitude) @ VCB = -50 V

Cross Reference & Replacement Information

The following part numbers are commonly reviewed for replacement or compatibility matching. Always verify datasheet, package, pinout, and operating conditions before bulk purchase.

Target BrandTarget MPNReplace TypeNotes
Toshiba2SB1200Direct ReplacementSimilar PNP BJT characteristics, check package compatibility.
Rohm2SB1386Functional AlternativeVerify voltage and current ratings match application requirements.
NXP SemiconductorsBC557BPossible ReplacementLower power device, suitable for low-current applications only.
ON SemiconductorPN2907AGeneral Purpose SubstituteCheck hFE range and thermal dissipation for specific use cases.

Datasheet

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Typical Applications

  • High-voltage PNP switching circuits
  • Low-frequency transistor amplifier stages
  • LED and indicator driver circuits
  • Complementary transistor output stages
  • Discrete load control circuits
  • Compact surface-mount driver applications

Ordering & RFQ Information

  • MOQ: Contact sales
  • Lead Time: 3–7 working days for stock items
  • Packaging: Reel / Tube / Tray depending on package
  • Sample Availability: Available on request
  • Mass Production Status: 50K+ pcs Stock / Mass Production

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FAQ

Can this part replace my current model?

It may be suitable depending on your circuit requirements. Please verify datasheet, package, pinout, and test samples before bulk orders.

Can I request samples?

Yes. Please submit your RFQ with target quantity and application details.

Need this part or a compatible replacement?

Send us your target part number, BOM list, quantity, and technical requirements. CNCHIPDEPOT can help review replacement options and provide RFQ support.

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Semiconductor Production

Controlled production environments supporting semiconductor and electronic component manufacturing processes.

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Electronic component quality inspection laboratory at China Chip Depot

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Quality inspection processes help verify component condition, specifications and production consistency before shipment.