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MMBT5401

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MMBT5401 high-voltage PNP BJT transistor with 150V VCEO, 600mA collector current, 350mW power and SOT-23-3 package.

BrandCNCHIPDEPOT
SKUCCDP-000816
Product TypeBJT
PackageSOT-23-3
Status50K+ pcs Stock / Mass Production
Transistor PolarityPNP
Collector-Emitter Voltage (VCEO)150 V
Collector Current (IC)600 mA
DC Current Gain (hFE)60 Min @ IC = 10 mA, VCE = 5 V
Power Dissipation (PD)350 mW
PackageSOT-23-3

Product Overview

The MMBT5401 is a high-voltage PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching. It features a 150V collector-emitter voltage rating, 600mA maximum collector current, and 350mW power dissipation. Its high breakdown voltage makes it suitable for signal processing and switching circuits that require greater voltage handling than conventional low-voltage PNP transistors.

Housed in a compact SOT-23-3 surface-mount package, the MMBT5401 supports high-voltage signal amplification, voltage level shifting, and discrete transistor control stages. Its electrical characteristics make it useful in space-constrained circuit designs where voltage capability is important, while appropriate thermal management remains essential.

Specifications

Key electrical, package, and sourcing parameters for quick engineering review.

Part NumberMMBT5401
BrandCNCHIPDEPOT
PackageSOT-23-3
Product TypeBJT
Transistor PolarityPNP
Collector-Emitter Voltage (VCEO)150 V
Collector Current (IC)600 mA
DC Current Gain (hFE)60–240 @ IC = 10 mA, VCE = 5 V
Power Dissipation (PD)350 mW @ TA = 25°C
Collector-Emitter Saturation Voltage (VCE(sat))0.5 V Max @ IC = 50 mA, IB = 5 mA
Transition Frequency (fT)100–300 MHz @ IC = 10 mA, VCE = 10 V
Collector-Base Voltage (VCBO)160 V
Emitter-Base Voltage (VEBO)5 V
Operating Temperature-55°C to +150°C (TJ)
Mounting TypeSurface Mount
Collector Cutoff Current (ICBO)50 nA Max @ VCB = 120 V, TA = 25°C

Cross Reference & Replacement Information

The following part numbers are commonly reviewed for replacement or compatibility matching. Always verify datasheet, package, pinout, and operating conditions before bulk purchase.

Target BrandTarget MPNReplace TypeNotes
ON Semiconductor2N5401Direct ReplacementSame electrical characteristics, widely used alternative.
Fairchild Semiconductor2N5401Cross ReferenceOriginal manufacturer part, equivalent specs.
STMicroelectronicsBC556Possible ReplacementSimilar PNP BJT, verify hFE and power dissipation.
Texas InstrumentsBC557Functional AlternativeCheck voltage and current ratings for specific applications.

Datasheet

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Typical Applications

  • High-voltage PNP signal amplification circuits
  • High-voltage level-shifting stages
  • Low-current high-side switching circuits
  • Complementary high-voltage transistor stages
  • Discrete analog signal conditioning
  • High-voltage sensing interface circuits

Ordering & RFQ Information

  • MOQ: Contact sales
  • Lead Time: 3–7 working days for stock items
  • Packaging: Reel / Tube / Tray depending on package
  • Sample Availability: Available on request
  • Mass Production Status: 50K+ pcs Stock / Mass Production

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FAQ

Can this part replace my current model?

It may be suitable depending on your circuit requirements. Please verify datasheet, package, pinout, and test samples before bulk orders.

Can I request samples?

Yes. Please submit your RFQ with target quantity and application details.

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